si4435dy vishay siliconix document number: 70149 s-49534erev. f, 06-oct-97 www.vishay.com faxback 408-970-5600 2-1 p-channel 30-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 30 0.02 @ v gs = 10 v 8.0 30 0.035 @ v gs = 4.5 v 6.0 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 sss g d d d d p-channel mosfet
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 8.0 a continuous drain current (t j = 150 c) a t a = 70 c i d 6.4 a pulsed drain current i dm 50 a continuous source current (diode conduction) a i s 2.1 maximum power dissipation a t a = 25 c p d 2.5 w maximum power dissipation a t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 50 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
si4435dy vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70149 s-49534erev. f, 06-oct-97
parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 15 v, v gs = 0 v, t j = 70 c 5 a on - state drain current b i d(on) v ds 5 v, v gs = 10 v 40 a on - state drain current b i d(on) v ds 5 v, v gs = 4.5 v 10 a drain - source on - state resistance b r ds(on) v gs = 10 v, i d = 8.0 a 0.015 0.02 drain - source on - state resistance b r ds(on) v gs = 4.5 v, i d = 5.0 a 0.022 0.035 forward transconductance b g fs v ds = 15 v, i d = 8.0 a 20 s diode forward voltage b v sd i s = 2.1 a, v gs = 0 v 0.75 1.2 v dynamic a total gate charge q g v15vv10vi46a 47 60 c gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 4.6 a 9.5 nc gate-drain charge q gd 8 turn-on delay time t d(on) v15vr15 16 30 rise time t r v dd = 15 v, r l = 15 i 1 a v 10 v r 6 17 30 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 75 120 ns fall time t f 31 80 source-drain reverse recovery time t rr i f = 2.1 a, di/dt = 100 a/ s 40 80 notes a. guaranteed by design, not subject to production testing. values shown are for product revision a. b. pulse test; pulse width 300 s, duty cycle 2%.
si4435dy vishay siliconix document number: 70149 s-49534erev. f, 06-oct-97 www.vishay.com faxback 408-970-5600 2-3
0 10 20 30 40 50 0123456 0 900 1800 2700 3600 4500 0 6 12 18 24 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 25 0 25 50 75 100 125 150 0 10 20 30 40 50 0246810 0 2 4 6 8 10 0 1020304050 0 0.025 0.050 0.075 0.100 0.125 0.150 0 1020304050 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 10 thru 5 v 3 v 4 v v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 4.6 a on-resistance ( r ds(on) w ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v i d = 8.0 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) w ) v gs = 10 v v gs = 4.5 v 25 c t c = -55 c 125 c
si4435dy vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70149 s-49534erev. f, 06-oct-97
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 110 normalized effective transient thermal impedance 30 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm power (w) 0 20 40 60 80 0.01 0.10 1.00 10.00 single pulse power 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 50 25 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 0.10 0246810 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage on-resistance ( r ds(on) w ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) variance (v) v gs(th) t j = 150 c t j = 25 c i d = 8.0 a i d = 250 m a 30 10 1 time (sec)
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